The Greatest Guide To N type Ge
≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the construction is cycled by oxidizing and annealing phases. Because of the preferential oxidation of Si over Ge [sixty eight], the first Si1–Crystallographic-orientation agnostic TiO2-dependent MIS contacts could be particularl